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AQV414E

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分類制造商

AQW414

GU(GeneralUse)Type[2-Channel(FormB)Type]

ETCList of Unclassifed Manufacturers

未分類制造商

詳細參數(shù)

  • 型號:

    AQV414AZJ

  • 制造商:

    Panasonic Electric Works

供應(yīng)商型號品牌批號封裝庫存備注價格
PANASONIC/松下
21+
SOP
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
NAIS
24+
DIP
6500
詢價
NAIS
06+
DIP6
2000
詢價
NAIS
22+
SOP
3000
強調(diào)現(xiàn)貨,隨時查詢!
詢價
NAIS
10+
DIP-6
7800
全新原裝正品,現(xiàn)貨銷售
詢價
Panasonic
2339+
DIP6
5650
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
NAIS
24+
DIP6
3500
原裝現(xiàn)貨,可開13%稅票
詢價
NAIS
2020+
DIP-6
999999
100%進口原裝正品公司現(xiàn)貨庫存
詢價
NAIS
17+
DIP
9888
全新進口原裝,現(xiàn)貨庫存
詢價
NAIS
1998
DIP
53843
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
更多AQV414AZJ供應(yīng)商 更新時間2025-1-24 14:36:00