零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HIGHVOLTAGE,PHOTOMOSRELAY | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
GU(GeneralUse)Type[2-Channel(FormB)Type] | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC |
詳細參數(shù)
- 型號:
AQV414AZJ
- 制造商:
Panasonic Electric Works
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PANASONIC/松下 |
21+ |
SOP |
9850 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
NAIS |
24+ |
DIP |
6500 |
詢價 | |||
NAIS |
06+ |
DIP6 |
2000 |
詢價 | |||
NAIS |
22+ |
SOP |
3000 |
強調(diào)現(xiàn)貨,隨時查詢! |
詢價 | ||
NAIS |
10+ |
DIP-6 |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
Panasonic |
2339+ |
DIP6 |
5650 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
NAIS |
24+ |
DIP6 |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
NAIS |
2020+ |
DIP-6 |
999999 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
NAIS |
17+ |
DIP |
9888 |
全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
NAIS |
1998 |
DIP |
53843 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
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