首頁 >APT6040BVRG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast | ADPOW Advanced Power Technology | ADPOW | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSE Sciosense B.V. | SCIOSENSE | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSE Sciosense B.V. | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSE Sciosense B.V. | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSE Sciosense B.V. | SCIOSENSE | ||
Crystal | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
ChargerProtectionICwithInternalFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
SwitchedCapacitorVoltageConverterforCellular | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
3SP227/30TCPEPVCComputerCable | GENERALGeneral Cable Technologies Corporation 通用電氣公司美國通用電氣公司 | GENERAL | ||
Highlycomplianttoaccommodatewideco-planarityvariations | IRONWOOD Ironwood Electronics. | IRONWOOD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 65V,116A,RDS(ON)=4.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=7.7mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 65V,89A,RDS(ON)=4.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=7.8mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 65V,116A,RDS(ON)=4.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=7.7mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 65V,89A,RDS(ON)=4.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=7.8mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
SurfaceMountOscillator FEATURES ?Size:5.0x3.2x1.3(mm) ?Miniaturepackage ?Tri-stateenable/disable ?HCMOScompatible ?Tapeandreel ?IRre-flow ?1.8Vinputvoltage ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SurfaceMountOscillator FEATURES ?Size:5.0x3.2x1.3(mm) ?Miniaturepackage ?Tri-stateenable/disable ?HCMOScompatible ?Tapeandreel ?IRre-flow ?1.8Vinputvoltage ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SurfaceMountOscillator FEATURES ?Size:5.0x3.2x1.3(mm) ?Miniaturepackage ?Tri-stateenable/disable ?HCMOScompatible ?Tapeandreel ?IRre-flow ?1.8Vinputvoltage ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
APT6040BVRG
- 功能描述:
MOSFET N-CH 600V 16A TO-247
- RoHS:
是
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
POWER MOS V®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
APTMICROSEMI |
17+ |
TO-247B |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
APT |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
APTMICROSEMI |
2023+ |
TO-247B |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
APT |
23+ |
TO-247B |
10000 |
公司只做原裝正品 |
詢價 | ||
Microchip |
21+ |
15000 |
只做原裝 |
詢價 | |||
APT |
23+ |
TO-247B |
6000 |
原裝正品,支持實單 |
詢價 | ||
microchip |
23+ |
15422 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 | |||
APTMICROSEMI |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
APTMICROSEMI |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
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