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APT6040BVFRG

POWER MOS V FREDFET

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040BVR

POWERMOSV

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast

ADPOW

Advanced Power Technology

APT6040BVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6040HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6040SVFR

POWERMOSVFREDFET

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040SVFRG

POWERMOSVFREDFET

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040SVR

POWERMOSV

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast

ADPOW

Advanced Power Technology

AS6040

UltrasonicFlowMetersforGasMeters

GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst

SCIOSENSE

Sciosense B.V.

AS6040-BQFM

UltrasonicFlowMetersforGasMeters

GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst

SCIOSENSE

Sciosense B.V.

AS6040-QF_DK

DevelopmentKitUserGuide

SCIOSENSE

Sciosense B.V.

AS6040-QF_DK_RB

DevelopmentKitUserGuide

SCIOSENSE

Sciosense B.V.

ATXN6040D

Crystal

CTSCTS Electronic Components

西迪斯西迪斯公司

BD6040GUL

ChargerProtectionICwithInternalFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BH6040FVM

SwitchedCapacitorVoltageConverterforCellular

ROHMRohm

羅姆羅姆半導(dǎo)體集團

C6040A

3SP227/30TCPEPVCComputerCable

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國通用電氣公司

CBT-BGA-6040

Highlycomplianttoaccommodatewideco-planarityvariations

IRONWOOD

Ironwood Electronics.

CEB6040SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 65V,116A,RDS(ON)=4.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=7.7mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6040SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 65V,89A,RDS(ON)=4.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=7.8mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6040SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 65V,116A,RDS(ON)=4.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=7.7mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6040SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 65V,89A,RDS(ON)=4.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=7.8mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    APT6040BVFRG

  • 功能描述：

    MOSFET N-CH 600V 16A TO-247

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
APTMICROSEMI
17+
TO-247B
31518
原裝正品 可含稅交易
 詢價
Microch
20+
NA
33560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
APTMICROS
2023+
TO-247B
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
APT
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
APT
24+
TO-247
1344
詢價
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
APT
23+
TO-247B
10000
公司只做原裝正品
 詢價
APT
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Microchip
21+
15000
只做原裝
 詢價
APT
22+
TO-247
8000
原裝正品支持實單
 詢價
更多APT6040BVFRG供應(yīng)商 更新時間2025-1-14 14:00:00

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