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APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6030SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ASITPV6030

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: ?CommonEmitter ?PG=9.5dBat35W/860MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

ATFN6030A

CrystalFilter

CTSCTS Electronic Components

西迪斯西迪斯公司

BD6030GSW

NegativepowersupplyforCCDcameraofmobilephones

ROHMRohm

羅姆羅姆半導(dǎo)體集團

C6030

Ultra-compactIndustrialPC

BECKHOFFBeckhoff Automation GmbH & Co. KG

倍福自動化

CBT-BGA-6030

Excellentsignalintegrityathighfrequencies

IRONWOOD

Ironwood Electronics.

CEB6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM6030LPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CK6030

MAGNETICPOWDERCORES

ETCList of Unclassifed Manufacturers

未分類制造商

CKRA6030

CrydomsCKRSeries

CKRSeries CrydomsCKRSeriesSolidStateRelaysweredevelopedtooffertheadvantagesofsemiconductorswitchingtechnologyinastandard22.5mmindustrialpackage.Quickandeasyinstallationiscoupledwithlowdrivepowerrequirementsandefficient,reliablepowerSCRoutput.BoxClamptermi

crydomCrydom Inc.,

快達

詳細參數(shù)

  • 型號：

    APT6030BVFRG

  • 功能描述：

    MOSFET N-CH 600V 21A TO-247

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
APTMICROSEMI
1822+
TO-247B
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
Microch
20+
NA
33560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
APTMICROSEMI
23+
TO-247B
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
 詢價
APT
21+
TO247
58
原裝現(xiàn)貨假一賠十
 詢價
APT
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
APT
2022+
TO-247
10
原廠代理 終端免費提供樣品
 詢價
APTMICROSEMI
23+
TO-247B
6000
原裝正品，支持實單
 詢價
APT
11+
TO247
58
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
APT
2023+
TO247
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
APT
23+
TO247
20000
原裝正品 歡迎咨詢
 詢價
更多APT6030BVFRG供應(yīng)商 更新時間2024-10-30 18:52:00

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