首頁 >APT6030BVFR>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

APT6030BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVFR

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT6030BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

APT6030BVFR_05

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT6030DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT6030SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6030SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ASITPV6030

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: ?CommonEmitter ?PG=9.5dBat35W/860MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

ATFN6030A

CrystalFilter

CTSCTS Electronic Components

西迪斯西迪斯公司

BD6030GSW

NegativepowersupplyforCCDcameraofmobilephones

ROHMRohm

羅姆羅姆半導體集團

C6030

Ultra-compactIndustrialPC

BECKHOFFBeckhoff Automation GmbH & Co. KG

倍福自動化

CBT-BGA-6030

Excellentsignalintegrityathighfrequencies

IRONWOOD

Ironwood Electronics.

CEB6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    APT6030BVFR

  • 制造商：

    ADPOW

  • 制造商全稱：

    Advanced Power Technology

  • 功能描述：

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供應(yīng)商型號品牌批號封裝庫存備注價格
APT
2016+
TO247
6528
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
APT
24+
8866
詢價
APT
335
TO-247
1789
全新原裝現(xiàn)貨100真實自己公司
 詢價
APT
22+
TO-3P
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
APT
23+
TO-3P
3000
專做原裝正品,假一罰百!
 詢價
APT
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
APT
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
APT
24+
TO-247
1300
詢價
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
APT
2021+
TO-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多APT6030BVFR供應(yīng)商 更新時間2025-1-15 14:55:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多