首頁 >APT5017BVFR>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
APT5017BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | ADPOW Advanced Power Technology | ADPOW | |
APT5017BVFR | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
POWERMOSV | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSVI? PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,delivers | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ? | ADPOW Advanced Power Technology | ADPOW | ||
IntermIttentLowNoiseAmplifier | AWINICShanghai awinic technology co.,ltd 艾為電子上海艾為電子技術股份有限公司 | AWINIC | ||
Low-LossFilterforWCDMA | EPCOSepcos 愛普科斯 | EPCOS | ||
Aluminumfrontpaneldesign | BOSER BOSER Technology Co., Ltd | BOSER |
詳細參數(shù)
- 型號:
APT5017BVFR
- 功能描述:
MOSFET N-CH 500V 30A TO-247
- RoHS:
是
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
POWER MOS V®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
詢價 | ||||
APT |
22+ |
TO-3P |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
詢價 | ||
APT |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
ADPOW |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
APT |
2021+ |
TO-3P |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
APT |
21+ |
TO-247 |
200 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
APT |
23+ |
TO-3P |
5000 |
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
APT |
23+ |
2800 |
正品原裝貨價格低 |
詢價 | |||
23+ |
TO-247 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
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