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APT4065GN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

B4065

SAWComponentsLow-LossFilter940,0MHz

EPCOSepcos

愛普科斯愛普科斯與TDK元件事業(yè)部

C4065A

8C22AWG(7/30)TCPVC,PVCCOMMUNICATION&CONTROLCABLE

GENERALGeneral Electric

通用電氣公司美國(guó)通用電氣公司

DMP4065S

40VP-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMP4065SQ

40VP-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

EMS4065

MACHINEPINSOCKET

ECE

EXCEL CELL ELECTRONIC CO., LTD.

FEB4065

HighVoltageSubscriberLineICHV-SLIC

SIEMENSSiemens Ltd

西門子德國(guó)西門子股份公司

FEB-F4065

HighVoltageSubscriberLineICHV-SLIC

SIEMENSSiemens Ltd

西門子德國(guó)西門子股份公司

FEF4065

HighVoltageSubscriberLineICHV-SLIC

SIEMENSSiemens Ltd

西門子德國(guó)西門子股份公司

FFSH4065A

SiliconCarbideSchottkyDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH4065BDN

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,40A,650V,D2,TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FG4065

FiberglassOmnidirectionalWirelessAntennas

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HM4065

5Amulti-typebatterychargingmanagementintegratedcircuit

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM4065B

4AMulti-TypeBatteryChargeManagementIC

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRGB4065PBF

PDPTRENCHIGBT

Description ThisIGBTisspecificallydesignedforapplicationsinPlasmaDisplayPanels.ThisdeviceutilizesadvancedtrenchIGBTtechnologytoachievelowVCE(on)andlowEPULSE?ratingpersiliconareawhichimprovepanelefficiency.Additionalfeaturesare150°Coperatingjunctiontemperatu

IRF

International Rectifier

IRGI4065PBF

PDPTRENCHIGBT

IRF

International Rectifier

IRGP4065DPBF

PDPTRENCHIGBT

Description ThisIGBTisspecificallydesignedforapplicationsinPlasmaDisplayPanels.ThisdeviceutilizesadvancedtrenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETMratingpersiliconareawhichimprovepanelefficiency.Additionalfeaturesare150°Coperatingjunctiontemperatu

IRF

International Rectifier

IRGP4065PBF

PDPTRENCHIGBT

Description ThisIGBTisspecificallydesignedforapplicationsinPlasmaDisplayPanels.Thisdeviceutilizesadvanced trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETMratingpersiliconareawhichimprovepanelefficiency.Additionalfeaturesare150°Coperatingjunctiontemp

IRF

International Rectifier

IRGS4065PBF

PDPTRENCHIGBT

Description ThisIGBTisspecificallydesignedforapplicationsinPlasmaDisplayPanels.ThisdeviceutilizesadvancedtrenchIGBTtechnologytoachievelowVCE(on)andlowEPULSE?ratingpersiliconareawhichimprovepanelefficiency.Additionalfeaturesare150°Coperatingjunctiontemperatu

IRF

International Rectifier

LP4065

800mASingleChipLi-IonandLi-PolymerCharger

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

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更多APT4065GN供應(yīng)商 更新時(shí)間2024-11-1 10:20:00