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AP6680GM

Low On-Resistance, High Vgs Max Rating Voltage

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP6680SGYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

BA6680FS

Three-phasemotorpre-driverforLBP

Description BA6680FSisathree-phasemotorpre-driver.PWMdrivingsystemisadoptedinthisICaswellasincorporationofaboostertodriveN-channel(upperandlower)MOSFET.Currentlimit,FGamplifier,FGhysteresisamplifierandcharge-pumpareincorporatedasotherfunctions. Fea

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EM6680

UltraLowPower8-pinMicrocontroller

EMMICRO

EM Microelectronic - MARIN SA

FDD6680

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680

N-ChannelLogicLevelPWMOptimizedPowerTrench??MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ?46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ?46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=46A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6680A

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680A

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=56A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6680A

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6680AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680AS

30VN-ChannelPowerTrench?SyncFET?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680AS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6680AS

30VN-ChannelMOSFET

Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(21nCtypical) ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?Highpowerandcurrenthandlingcapability ?VDS(V)=30V ?ID=50A(VGS=10V) ?RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱(chēng)UMW?)

FDD6680AS

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6680AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6680-NL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FDD6680S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription TheFDD6680SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680SincludesanintegratedSchottkydiodeusin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    AP6680GM

  • 制造商:

    A-POWER

  • 制造商全稱(chēng):

    Advanced Power Electronics Corp.

  • 功能描述:

    Low On-Resistance, High Vgs Max Rating Voltage

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
APEC/富鼎
21+
SOP8
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢(xún)價(jià)
Bychip
23+
SOP8
10000
高品質(zhì)替代,技術(shù)支持,參數(shù)選型
詢(xún)價(jià)
APEC
13+
NA
37258
原裝分銷(xiāo)
詢(xún)價(jià)
SR
23+
SOP8
5000
原裝正品,假一罰十
詢(xún)價(jià)
NA
19+
63881
原廠代理渠道,每一顆芯片都可追溯原廠;
詢(xún)價(jià)
APEC
23+
SOP-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢(xún)價(jià)
APEC/富鼎
23+
SOP-8
69000
全新原裝現(xiàn)貨熱賣(mài)/代理品牌/可申請(qǐng)樣品和規(guī)格書(shū)
詢(xún)價(jià)
APEC/富鼎
21+
SOP8
23000
只做正品原裝現(xiàn)貨
詢(xún)價(jià)
APEC
21+
SOP-8
2500
原裝現(xiàn)貨假一賠十
詢(xún)價(jià)
APEC
22+
SOP-8
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢(xún)價(jià)
更多AP6680GM供應(yīng)商 更新時(shí)間2024-10-26 10:05:00