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AQV234

HS(HighSensitivity)Type[1-Channel(FormA)Type]

FEATURES 1.Highsensitivitytype LEDoperatecurrent:typical0.31mA 2.Low-leveloffstateleakagecurrent(Typical1μAat400Vloadvoltage) 3.EliminatestheneedforapowersupplytodrivethepowerMOSFET 4.Lowthermalelectromotiveforce(Approx.1μV) 5.Extremelylowclosed-cir

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV234A

HS(HighSensitivity)Type[1-Channel(FormA)Type]

FEATURES 1.Highsensitivitytype LEDoperatecurrent:typical0.31mA 2.Low-leveloffstateleakagecurrent(Typical1μAat400Vloadvoltage) 3.EliminatestheneedforapowersupplytodrivethepowerMOSFET 4.Lowthermalelectromotiveforce(Approx.1μV) 5.Extremelylowclosed-cir

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV234AX

HS(HighSensitivity)Type[1-Channel(FormA)Type]

FEATURES 1.Highsensitivitytype LEDoperatecurrent:typical0.31mA 2.Low-leveloffstateleakagecurrent(Typical1μAat400Vloadvoltage) 3.EliminatestheneedforapowersupplytodrivethepowerMOSFET 4.Lowthermalelectromotiveforce(Approx.1μV) 5.Extremelylowclosed-cir

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV234AZ

HS(HighSensitivity)Type[1-Channel(FormA)Type]

FEATURES 1.Highsensitivitytype LEDoperatecurrent:typical0.31mA 2.Low-leveloffstateleakagecurrent(Typical1μAat400Vloadvoltage) 3.EliminatestheneedforapowersupplytodrivethepowerMOSFET 4.Lowthermalelectromotiveforce(Approx.1μV) 5.Extremelylowclosed-cir

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

ASIMRF234

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF234isDesignedforLarge-SignalAmplifierApplicationsto100MHz. FEATURES: ?CommonEmitter ?Omnigold?MetalizationSystem ?PG=9.5dBmin.at25W/90MHz

ASI

Advanced Semiconductor

ASW234

5-8000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

ASW234

MMICAmplifier

ASB

Advanced Semiconductor Business Inc.

BD234

SILICONPNPTRANSISTOR

DESCRIPTION TheBD234isasiliconepitaxial-basePNPpowertransistorinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPE ■PNPTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

BD234

MediumPowerLinearandSwitching

MediumPowerLinearandSwitchingApplications ?ComplementtoBD233/235/237respectively

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD234

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD233/235/237 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD234

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?EpoxyMeetsUL94V0@0.125in ?ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD234

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD233/235/237 APPLICATIONS ?Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD234

MediumPowerLinearandSwitchingApplications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD234

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

CDIL

Continental Device India Limited

BD234

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD234

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD233/BD235/BD237respectively

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BD234

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ComplementtoBD233/BD235/BD237respectively

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

BD234

SiliconPNPPowerTransistor

DESCRIPTION ?DCCurrentGain-:hFE=40(Min)@lc=-0.15A ?ComplementtoTypeBD233/235/237 APPLICATIONS ?Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD234

GERMANIOVETRANZISTORY

ETCList of Unclassifed Manufacturers

未分類制造商

BD234G

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?DCCurrentGain?hFE=40(Min)@IC=0.15Adc ?EpoxyMeetsUL94V0@0.125in ?ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細參數(shù)

  • 型號:

    AP234FL EG

  • 制造商:

    Thomas & Betts

  • 功能描述:

    SS AP234FLEG FLUSH STYLE POST BASE

供應(yīng)商型號品牌批號封裝庫存備注價格
AiT
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一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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APLUS
23+
DIP8
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
HOLLTEK
23+
SOP16
10000
原裝正品現(xiàn)貨
詢價
更多AP234FL EG供應(yīng)商 更新時間2025-1-9 15:53:00