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CJP07N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF07N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF07N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CMT07N60

POWERFIELDEFFECTTRANSISTOR

[ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

FSA07N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

FTA07N60C

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

H07N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H07N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

ISPP07N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISPW07N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤700m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MH07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MHF07N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MJU07N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

SPA07N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPP07N60CFD

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SPP07N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.7? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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APEC/富鼎
23+
TO-220F
388888
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AP
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8200
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AP
23+
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15000
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AP
2021+
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100500
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21+
TO-220
849
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富鼎ACEP
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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22+
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25000
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富鼎ACEP
05+
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849
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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富鼎ACEP
23+
TO-220
10000
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APEC
13+
NA
37258
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更多AP07N60BF供應(yīng)商 更新時(shí)間2025-1-10 11:09:00