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AOK27S60L

isc N-Channel MOSFET Transistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=27A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max) ?100avalanchetested ?Minimum

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK27S60L

600V 27A a MOS

GeneralDescription TheAOK27S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOB27S60

600V27AaMOSPowerTransistor

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOB27S60

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOB27S60L

600V27AaMOS

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK27S60

600V27AaMOSPowerTransistor

GeneralDescription TheAOK27S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT27S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOT27S60

600V27AaMOSPowerTransistor

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT27S60L

600V27AaMOS

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF27S60

600V27AaMOSPowerTransistor

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF27S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOTF27S60

600V27AaMOS

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF27S60L

600V27AaMOS

GeneralDescription TheAOT27S60&AOB27S60&AOTF27S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

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