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AOD456

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456isPb-free(meetsROHS&Sony259specifications).AOD4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD456

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=50A@TC=25℃ ?DrainSourceVoltage- :VDSS=25V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOD456

N-Channel 20-V (D-S)175 C MOSFET

FEATURES ●TrenchFETPowerMOSFET ●175°CMaximumJunctionTemperature ●100RgTested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

AOD456

N-Channel Enhancement Mode Field Effect Transistor

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD456A

Plastic Encapsulated Device

ProductDescription: TheAOD456AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456AisPb-free(meetsROHS&Sony259specifications). A

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD456A

N-Channel 20-V (D-S)175 C MOSFET

FEATURES ●TrenchFETPowerMOSFET ●175°CMaximumJunctionTemperature ●100RgTested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

AOD456A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOD456AL

Plastic Encapsulated Device

ProductDescription: TheAOD456AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456AisPb-free(meetsROHS&Sony259specifications). A

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD456L

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456isPb-free(meetsROHS&Sony259specifications).AOD4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD456_08

N-Channel Enhancement Mode Field Effect Transistor

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOI456

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

AOI456

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOU456

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU456isPb-free(meetsROHS&Sony259specifications).AOU4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOU456

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

AOU456

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOU456L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU456isPb-free(meetsROHS&Sony259specifications).AOU4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

BD456N

45AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD456P

45AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BMA456

Digital,triaxialaccelerationsensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BMR456

2013-2013-FullyregulatedAdvancedBusConvertersInput36-75V,Outputupto39A/468W

EricssonEricsson Microelectronics

愛立信

詳細參數(shù)

  • 型號:

    AOD456

  • 功能描述:

    MOSFET N-CH 25V 50A TO252

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    -

  • 標準包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
AOS
2020+
TO-252
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
AOS
22+
TO252
10000
原裝正品優(yōu)勢供應(yīng)
詢價
AOS/萬代
21+
6000
原裝正品
詢價
AOS/萬代
21+
TO-252
6000
原裝正品
詢價
AOS/萬代
24+
TO-252
333888
原裝進口 AOS原廠代理商
詢價
AO
24+
TO252
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價
AOS/萬代
24+
TO-252
498579
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
AOS
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
AO
24+
TO-252
35000
詢價
AO
23+
TO-252
5000
原裝正品,假一罰十
詢價
更多AOD456供應(yīng)商 更新時間2024-10-24 22:30:00