首頁 >AND2307SAL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,,lowon-resistanceandcost-effectiveness. TheSOT-23packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedforlowvoltageapplicati | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
P-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
SimpleDriveRequirement,SmallPackageOutline Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-23packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/ | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
P-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,,lowon-resistanceandcost-effectiveness. TheSOT-23packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedforlowvoltageappli | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
P-ChannelEnhancementModeMOSFET Features ?-30V/-3A,RDS(ON)=100m?(typ.)@VGS=-10V RDS(ON)=140m?(typ.)@VGS=-4.5V ?SuperHighDenseCellDesignforExtremely LowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquipmen | ANPECAnpec Electronics Coropration 茂達(dá)電子茂達(dá)電子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features ?-30V/-3A,RDS(ON)=100m?(typ.)@VGS=-10V RDS(ON)=140m?(typ.)@VGS=-4.5V ?SuperHighDenseCellDesignforExtremely LowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquipmen | ANPECAnpec Electronics Coropration 茂達(dá)電子茂達(dá)電子股份有限公司 | ANPEC | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASI2307isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3000MHz. FEATURES: ?PG=9.5dBmin.at7W/2300MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
Dual,20/40/65/80MSPS,12/13-bitAnalog-to-DigitalConverters | CADEKA Cadeka Microcircuits LLC. | CADEKA | ||
Dual,20/40/65/80MSPS,12/13-bitAnalog-to-DigitalConverters | EXARExar Corporation 艾科嘉艾科嘉(杭州)信息技術(shù)有限公司 | EXAR | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細(xì)參數(shù)
- 型號:
AND2307SAL
- 制造商:
AND Displays/Purdy Electronics
- 功能描述:
LED; 7.8 mcd/segment(Typ.) @ 10 mA; 635 nm(Typ.) @ 10 mA; 53 mm; -25 degC
- 功能描述:
DISPLAY, SEVEN SEGMENT, 38.1MM, RED; No. of
- Digits/Alpha:
1; Character
- Size:
58.42mm; LED
- Color:
Red; Common
- Connection:
Common Anode; Luminous
- Intensity:
7.8mcd; Forward Current
- If:
20mA; Forward
- Voltage:
8.4V; Body
- Material:
GaAsP ;RoHS
- Compliant:
Yes
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AND/PurdyElectronics |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
AND / Purdy Electronics |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
24+ |
N/A |
65000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
聚永昶 |
150 |
詢價 | |||||
聚永昶 |
24+ |
con |
150 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index |
詢價 | ||
聚永昶 |
24+ |
con |
150 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index |
詢價 |
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