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AN3147

Power management in STM8L and STM8AL

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

CPH3147

PNPEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications

Features ?AdoptionofFBET,MBITprocesses. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.9mm). ?Highallowablepowerdissipation. Applications ?DC

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

ISL3147XE

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

MS3147

MilitaryStandardConnectorIndex

ThefollowingisalistingofcircularconnectorsdefinedbyUSMilitarySpecifications,cross-referencedtotheapplicableactiveorinactivepartnumberseries.ThesymbolsintheConnectorDesignatorcolumnareanessentialelementinGlenair’sbackshellpartnumberdevelopments.

GLENAIR

Glenair, Inc.

NTE3147

LightEmittingDiode−5mm

Features: AllPlasticMoldTypew/WaterClearLens: NTE3144(HighEfficiencyRed,AllGaP/GaAs) NTE3145(YellowGreen,GalnN/GaN) NTE3146(Yellow,AllnGaP/GaAs) NTE3147(Orange,AllnGaP/GaAs) AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) PowerDissipation,

NTE

NTE Electronics

NTGD3147F

PowerMOSFETandSchottkyDiode??0V,??.5A,P??hannelwithSchottkyBarrierDiode,TSOP??

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PE3147

CABLEASSEMBLYPE-047SRSMAMALERIGHTANGLETOSMAMALERIGHTANGLE

PASTERNACK

Pasternack Enterprises, Inc.

PE3147LF

cableassembly,pe-047sr,smamalerightangletosmamalerightangle(leadfree)

PASTERNACK

Pasternack Enterprises, Inc.

PST3147

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

PST3147

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

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24+
1269
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23+
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5000
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24+
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2630
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22+
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8200
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90000
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PANASANT
2447
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100500
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5177
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PAN
2023+
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8700
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2025+
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4865
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Panason
2016+
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6528
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更多AN3147供應(yīng)商 更新時(shí)間2025-2-25 15:45:00