AN2017-14中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1.1 Key features

The section describes the features of the evaluation PCBs and their key parameter.

The Evaluation Board EVAL-1EDI20H12AH-SIC is intended to evaluate the Infineon EiceDRIVER? 1EDC20H12AH

or 1EDI20H12AH together with the Infineon SiC MOSFET IMZ120R045M1 in an application circuit to understand

the features and performance of both devices.

The board contains two gate drivers to drive two SiC MOSFET switches in half bridge configuration.

An additional gate driver is used to transfer the over-current information through the isolation barrier between

the power high voltage side to the low voltage input side.

Some supporting circuits like voltage regulator and DC-DC converter are implemented for a simple use in the

laboratory. The DC-DC converter provides galvanically isolated supply voltages for each SiC MOS driver stage.

The picture shows the top view of the EVAL-1EDI20H12AH-SIC.

The board has a size of 85 x 55 x 30 mm3.

It is intended to be used for so called double pulse testing. However, it's under the responsibility of the user to

adapt it for testing it under continuous operation by adding a heat sink. An additional blocking capacitor to the

high voltage supply is recommended.

The low voltage interface can be controlled by a pulse generator, a microcontroller or other digital circuits.

For safe operation a fast overcurrent detection and protection circuit is implemented with a galvanically

isolated feedback path to the low voltage input side. The trigger flip-flop is implemented to latch the

overcurrent event information. This circuit will report the overcurrent event and turns OFF both drivers after an

overcurrent event. The button S1 will reset the flip-flop to enable the drivers again. Further description is

provided in the section Overcurrent protection.