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AM29F200AB-120DTC1中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

AM29F200AB-120DTC1
廠商型號(hào)

AM29F200AB-120DTC1

功能描述

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1

文件大小

118.69 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-10-28 20:10:00

AM29F200AB-120DTC1規(guī)格書詳情

GENERAL DESCRIPTION

The Am29F200A in Known Good Die (KGD) form is a 2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10 for read and write operations

— Minimizes system level power requirements

■ High performance

— 90 or 120 ns access time

■ Low power consumption

— 20 mA typical active read current (byte mode)

— 28 mA typical active read current for (word mode)

— 30 mA typical program/erase current

— 1 μA typical standby current

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 100,000 write/erase cycles guaranteed

■ Compatible with JEDEC standards

— Pinout and software compatible with single-power-supply flash

— Superior inadvertent write protection

■ Data# Polling and Toggle Bit

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Hardware method for detection of program or erase cycle completion

■ Erase Suspend/Resume

— Supports reading data from a sector not being erased

■ Hardware RESET# pin

— Resets internal state machine to the reading array data

■ Tested to datasheet specifications at temperature

■ Quality and reliability levels equivalent to standard packaged components

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