AM28F512-150EEB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The Am28F512 is a 512 K bit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F512 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512 is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5

■ Latch-up protected to 100 mA from -1 V to VCC +1 V

■ Flasherase Electrical Bulk Chip-Erase

— One second typical chip-erase

■ Flashrite Programming

— 10 μs typical byte-program

— One second typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer