AM28F010A-120JCB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010A is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■High performance

— Access times as fast as 70 ns

■CMOS low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■100,000 write/erase cycles minimum

■Write and erase voltage 12.0 V ±5

■Latch-up protected to 100 mA from

–1 V to VCC+1 V

■Embedded Erase Electrical Bulk Chip Erase

— 5 seconds typical chip erase, including

pre-programming

■Embedded Program

— 14 μs typical byte program, including time-out

— 4 seconds typical chip program

■Command register architecture for microprocessor/microcontroller compatible write interface

■On-chip address and data latches

■Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■Embedded algorithms for completely self-timed write/erase operations