AGR18125EU中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

Introduction

The AGR18125E is a 125 W, 26 V, N-channel gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multi-carrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-theart performance and reliability. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 125 W which makes it ideally suited for today’s RF power amplifier applications.

Features

Typical performance ratings for GSM EDGE

(f = 1.840 GHz, POUT = 50 W)

— Modulation spectrum:

@ ± 400 kHz = –60 dBc.

@ ± 600 kHz = –72 dBc.

Typical performance over entire digital communication system (DCS) band:

— P1dB: 125 W typical (typ).

— Power gain: @ P1dB = 13.5 dB.

— Efficiency: @ P1dB = 50 typ.

— Return loss: –10 dB.

High-reliability, gold-metallization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

125 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1.840 GHz, 125 W continuous wave (CW) output power.

Large signal impedance parameters available.