ADUM4121-1TRIZ-EP中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The ADuM4121-1-EP1 is a 2.3 A isolated, single-channel driver

that employ Analog Devices, Inc., iCoupler? technology to provide

precision isolation. The ADuM4121-1-EP provides 5 kV rms

isolation in the wide-body, 8-lead SOIC package. Combining high

speed CMOS and monolithic transformer technology, this

isolation component provides outstanding performance

characteristics superior to alternatives such as the combination

of pulse transformers and gate drivers.

The ADuM4121-1-EP operates with an input supply ranging

from 2.5 V to 6.5 V, providing compatibility with lower voltage

systems. In comparison to gate drivers that employ high voltage

level translation methodologies, the ADuM4121-1-EP offers the

benefit of true, galvanic isolation between the input and the output.

The ADuM4121-1-EP includes an internal Miller clamp that

activates at 2 V on the falling edge of the gate drive output,

supplying the driven gate with a lower impedance path to reduce

the chance of Miller capacitance induced turn on.

The ADuM4121-1-EP provides reliable control over the switching

characteristics of insulated gate bipolar transistor (IGBT)/metal

oxide semiconductor field effect transistor (MOSFET) configurations

over a wide range of switching voltages.

Additional application and technical information can be found

in the ADuM4121-1 data sheet.

FEATURES

2.3 A peak output current (typical)

2.5 V to 6.5 V input

7.5 V to 35 V output

Undervoltage lockout (UVLO) at 2.5 V VDD1 and 7.5 V VDD2

Precise timing characteristics

53 ns maximum isolator and driver propagation delay

CMOS input logic levels

High common-mode transient immunity: >150 kV/μs

High junction temperature operation: 125°C

Default low output

Internal Miller clamp

Safety and regulatory approvals (pending)

UL recognition per UL 1577

5 kV rms for 1-minute withstand

CSA Component Acceptance Notice 5A

VDE certificate of conformity (pending)

DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12

VIORM = 849 V peak

Wide-body, 8-lead SOIC

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications (AQEC standard)

Military temperature range (?55°C to +125°C)

Controlled manufacturing baseline

1 assembly/test site

1 fabrication site

Product change notification

Qualification data available on request

APPLICATIONS

Missiles and munitions

Avionics

Unmanned systems

Isolated IGBT/MOSFET gate drives