ADRF5301_V01中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The ADRF5301 is a reflective, SPDT switch manufactured in the

silicon process. The ADRF5301 was developed for 5G applications from 37 GHz

to 49 GHz. This device has a low insertion loss of 1.4 dB, high

isolation of 30 dB, and RF input power handling capability of 28

dBm average and 36 dBm peak.

The ADRF5301 incorporates a negative voltage generator (NVG) to

operate with a single positive supply of 3.3 V applied to the VDD

pin. The device employs complementary metal-oxide semiconductor

(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible

control. The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant,

land grid array package and can operate from ?40°C to +105°C.

FEATURES

? Reflective design

? Low insertion loss: 1.4 dB typical

? High isolation: 30 dB typical

? High input linearity:

? P0.1dB: 36 dBm

? Input IP3: 52 dBm

? High RF power handling

? 28 dBm average

? 36 dBm peak

? Single-supply operation: 3.3V

? Internal NVG

? RF settling time (0.1 dB final RF output): 50 ns

? 20-terminal, 3 mm × 3 mm, land grid array (LGA) package

APPLICATIONS

? Industrial scanner

? Test instrumentation

? Cellular infrastructure mmWave 5G

? Military radios, radars, electronic counter measures (ECMs)

? Microwave radios and very small aperture terminals (VSATs)