ADL8100ACPZN中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), wideband low noise amplifier (LNA) that operates

from 0.01 GHz to 20 GHz. The ADL8100 provides a typical

gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at

6 GHz to 14 GHz, and a typical output third-order intercept (OIP3)

of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a

5 V supply voltage. The power dissipation can be lowered at the

expense of OIP3 and output power. The ADL8100 also features

inputs and outputs that are DC-coupled and internally matched to 50 Ω.

FEATURES

? Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz

? Single positive supply (self biased)

? High gain: 20 dB typical from 0.01 GHz to 6 GHz

? High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz

? RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

APPLICATIONS

? Satellite communication

? Telecommunications

? Civilian radars

? Military radars

? Weather radars

? Electronic warfare