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BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    ADG904BRU-R

  • 功能描述:

    IC MULTIPLEXER 4X1 20TSSOP

  • RoHS:

  • 類別:

    集成電路(IC) >> 接口 - 模擬開關(guān),多路復(fù)用器,多路分解器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    48

  • 功能:

    開關(guān)

  • 電路:

    4 x SPST - NO

  • 導(dǎo)通狀態(tài)電阻:

    100 歐姆

  • 電壓電源:

    單/雙電源 電壓 -

  • 電源,單路/雙路(±):

    2 V ~ 12 V,±2 V ~ 6 V 電流 -

  • 電源:

    50nA

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    16-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    16-SOIC

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
AnalogDevices
20SSOP
2500
AD代理旗下一級分銷商,主營AD全系列產(chǎn)品
詢價(jià)
ADI
24+
WBandAbsorbt
6521
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
詢價(jià)
ADI
19+
565
原裝正品
詢價(jià)
Analog Devices Inc.
24+
20-TSSOP
56300
一級代理/放心采購
詢價(jià)
AD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
ADI
20+
SSOP-20
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
Analog Devices
23+
12500
詢價(jià)
AD
2308+
TSSOP-20
7896
十年專業(yè)專注 ADI優(yōu)勢渠道正品保證
詢價(jià)
Analog Devices Inc.
25+
20-TSSOP(0.173 4.40mm 寬)
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
ADI
24+
20-TSSOP
9086
主營ADI原裝正品,歡迎選購
詢價(jià)
更多ADG904BRU-R供應(yīng)商 更新時(shí)間2025-5-21 16:19:00