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ADG636

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636

1 pC Charge Injection, 100 pA Leakage

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRU

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRU

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRU-REEL

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ1

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ-REEL1

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ-REEL71

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636_15

1 pC Charge Injection, 100 pA Leakage

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AL-HG636A

GreenSMDChipLEDLamps(0.6mmHeight)

A-BRIGHT

A-BRIGHT Inc

AL-HG636D

GreenSMDChipLEDLamps(0.8mmHeight)

A-BRIGHT

A-BRIGHT Inc

AT636

PHASECONTROLTHYRISTOR

PHASECONTROLTHYRISTOR Repetitivevoltageupto1800V Meanon-statecurrent1965A Surgecurrent36kA

POSEICO

Power Semiconductors

ATS636LSE

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

Allegro

Allegro MicroSystems

ATS636LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

Allegro

Allegro MicroSystems

ATS636LSETN-T

TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...

Allegro

Allegro MicroSystems

BC636

HighCurrentTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC636

COMPLEMENTARYSILICONTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

BC636

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.80V). APPLICATIONS ?Audioandvideoamplifiers.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC636

HighCurrentTransistors(PNPSilicon)

HighCurrentTransistorsPNPSilicon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC636

HighCurrentTransistors

HighCurrentTransistorsPNPSilicon

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào):

    ADG636

  • 制造商:

    AD

  • 制造商全稱:

    Analog Devices

  • 功能描述:

    1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AD
1215+
TSSOP
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
詢價(jià)
ADI
2020+
TSSOP14
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
ADI
2023+
SSOP
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
ADI
24+
SSOP
9860
全新原裝現(xiàn)貨/假一罰百!
詢價(jià)
AD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
AD
2023+
原廠原包
8700
原裝現(xiàn)貨
詢價(jià)
AD
2016+
TSSOP
3652
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價(jià)
AnalogDevices
14SSOP
1000
AD代理旗下一級(jí)分銷(xiāo)商,主營(yíng)AD全系列產(chǎn)品
詢價(jià)
AD
23+
TSSOP
8000
原裝正品,假一罰十
詢價(jià)
AD
23+
TSSOP
2000
全新原裝
詢價(jià)
更多ADG636供應(yīng)商 更新時(shí)間2025-1-6 11:04:00