ACE12322AMN+H中文資料ACE數(shù)據(jù)手冊PDF規(guī)格書

Description

The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance. These devices are particularly suited for low voltage application

notebook computer power management and other battery powered circuits where high-side switching,

low in-line power loss and resistance to transients are needed.

Features

? 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V

? 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V

? 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V

? Super high density cell design for extremely low RDS (ON)

? Exceptional on-resistance and maximum DC current capability

? DFN2X2-6L package design

Applications

? Power Management in Note book

? Portable Equipment

? Battery Powered System

? DC/DC Converter

? Load Switch

? DSC

? LCD Display inverter