首頁(yè) >AC193(-7...-9)>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainamplifiersupto2GHz ?Forlinearbroadbandamplifiers ?fT=8GHz,NFmin=1dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Forlownoise,high-gainamplifiersupto2GHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainbroadbandamplifiersupto2GHz.) Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006 | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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