首頁 >AB1A4M>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

AB1A4M

on-chip resistor NPN silicon epitaxial transistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Currentdriveavailableupto0.7A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AN1A4M

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1A4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AN1A4P

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1A4Pisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AN1A4Z

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=10k?) ?ComplementarytransistorwithAA1A4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AN1A4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipbiasresistor (R1=10k?) ?ComplementarytransistorwithAA1A4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

AP1A4A

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Currentdriveavailableupto0.7A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AP1A4M

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Currentdriveavailableupto0.7A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AQ1A4A

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICandmotorsolenoidavailableup to2A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AR1A4A

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICoutputandactuatoravailable ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AR1A4M

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICoutputandactuatoravailable ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1A4M

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1A4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1A4P

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1A4Pisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1A4Z

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=10k?) ?ComplementarytransistorwithBA1A4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1A4Z

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=10kΩ) ?ComplementarytransistorwithBA1A4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB1A4A

COMPOUNDTRANSISTORon-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BB1A4M

COMPOUNDTRANSISTORon-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1A4M

TheBN1A4Misdesignedforuseinmediumspeedswitchingcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1A4P

PNPSILICONTRANSISTOR

DESCRIPTION TheBN1A4Pisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1A4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=10k?) ?ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1A4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipbiasresistor (R1=10kΩ)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

晶體管資料

  • 型號:

    AB1A4M

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    0.7A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    0.75W

  • 放大倍數(shù):

  • 圖片代號:

    A-20

  • vtest:

    30

  • htest:

    999900

  • atest:

    0.7

  • wtest:

    0.75

詳細參數(shù)

  • 型號:

    AB1A4M

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    on-chip resistor NPN silicon epitaxial transistor

供應商型號品牌批號封裝庫存備注價格
N/A
2023+
N/A
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
TELEMECANIQUE
76
全新原裝 貨期兩周
詢價
SAMSUNG
24+
DIP-8
5000
只做原裝公司現(xiàn)貨
詢價
SAMSANG
19+
DIP-8
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
SAMSUNG/三星
21+
DIP-8
25000
只做正品原裝現(xiàn)貨
詢價
SAMSUNG/三星
23+
NA/
3350
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
SAMSUNG/三星
24+
DIP-8
100
原裝正品,假一罰十!
詢價
SAMSUNG/三星
23+
DIP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
SAMSUNG/三星
23+
DIP-8
20000
原裝正品 歡迎咨詢
詢價
Schneider Electric
2021+
端子塊
285000
專供連接器,軍工合格供應商!
詢價
更多AB1A4M供應商 更新時間2024-12-25 19:05:00