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AB1A3M

on-chip resistor NPN silicon epitaxial transistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Currentdriveavailableupto0.7A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

ADSP-H1A3

1.0??SingleDigitPCBBasedLEDDisplay

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

AN1A3Q

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipbiasresistor (R1=1.0k?,R2=10k?) ?ComplementarytransistorwithAA1A3Q

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

AN1A3Q

On-ChipResistorPNPSiliconEpitaxialTransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0k?,R2=10k?) ?ComplementarytransistorwithAA1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AP1A3M

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?Currentdriveavailableupto0.7A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AQ1A3M

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICandmotorsolenoidavailableup to2A ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

AR1A3M

on-chipresistorPNPsiliconepitaxialtransistor

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?HighcurrentdrivessuchasICoutputandactuatoravailable ?On-chipbiasresistor ?Lowpowerconsumptionduringdrive

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BA1A3Q

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) ?ComplementarytransistorwithBN1A3Q

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BA1A3Q

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0k?,R2=10k?) ?ComplementarytransistorwithBN1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BB1A3M

COMPOUNDTRANSISTORon-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BN1A3Q

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0kΩ,R2=10kΩ) ?ComplementarytransistorwithBA1A3Q

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BN1A3Q

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=1.0k?,R2=10k?) ?ComplementarytransistorwithBA1A3Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BP1A3M

On-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching TheBP1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplian

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

CE1A3Q

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipzenerdiodeforsurgevoltageabsorption ?On-chipbiasresistor:R1=1.0k?,R2=10k? ?Lowpowerconsumptionduringdriving: VOL=0.12V@VI=5.0V,IC=0.5A ?On-chipdumperdiodeforreversecable

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CE1A3Q

COMPOUNDTRANSISTOR

TheCE1A3Qisatransistorofon-chiphighhFEresistorincorporatingdumperdiodeincollectortoemitterandzenerdiodeincollectortobaseasprotectelements.ThistransistorisidealforactuatordrivesofOAequipmentsandelectricequipments. FEATURES ?On-chipzenerdiodeforsur

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

F1A3

1.0AmpMINIATUREPLASTICSILICONRECTIFIERS

Features ■LOWCOST ■LOWLEAKAGE ■DIFFUSEDJUNCTION ■MEETSULSPECIFICATION94V-0

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

F1A3

1.0AmpMINIATUREPLASTICSILICONRECTIFIERS

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

F1A3

1.0AMP.FASTRECOVRYRECTIFIERS

FEATURES *Lowforwardvoltaedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

F1A3G

1.0AMP.GLASSPASSIVATEDFASTRECOVERYRECTIFIERS

FEATURES *Lowforwardvoltaedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

FA1A3Q

SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

晶體管資料

  • 型號：

    AB1A3M

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產廠家：

  • 制作材料：

    Si-N+R

  • 性質：

    開關管 （S）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    30V

  • 最大電流允許值：

    0.7A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數：

    3

  • 可代換的型號：

  • 最大耗散功率：

    0.75W

  • 放大倍數：

  • 圖片代號：

    A-20

  • vtest：

    30

  • htest：

    999900

  • atest：

    0.7

  • wtest：

    0.75

詳細參數

  • 型號：

    AB1A3M

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    on-chip resistor NPN silicon epitaxial transistor

供應商型號品牌批號封裝庫存備注價格
N/A
2023+
N/A
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
TELEMECANIQUE
新
76
全新原裝 貨期兩周
 詢價
SAMSUNG
24+
DIP-8
5000
只做原裝公司現貨
 詢價
SAMSANG
19+
DIP-8
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG/三星
21+
DIP-8
25000
只做正品原裝現貨
 詢價
SAMSUNG/三星
23+
NA/
3350
原裝現貨,當天可交貨,原型號開票
 詢價
SAMSUNG/三星
24+
DIP-8
100
原裝正品,假一罰十!
 詢價
SAMSUNG/三星
23+
DIP-8
50000
全新原裝正品現貨,支持訂貨
 詢價
SAMSUNG/三星
23+
DIP-8
20000
原裝正品 歡迎咨詢
 詢價
Schneider Electric
2021+
端子塊
285000
專供連接器,軍工合格供應商!
 詢價
更多AB1A3M供應商 更新時間2024-12-25 19:05:00

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