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AA1L4M

NPN SILICON TRANSISTOR

DESCRIPTION TheAA1L4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

AA1L4Z

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithAN1L4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

AA1L4Z

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithAN1L4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

AN1L4L

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1L4Lisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

AN1L4M

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1L4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

AN1L4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithAA1L4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

AN1L4Z

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithAA1L4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BA1L4L

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1L4Lisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BA1L4M

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1L4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BA1L4Z

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47kΩ) ?ComplementarytransistorwithBN1L4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BA1L4Z

on-chipresistorNPNsiliconepitaxialtransistor

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithBN1L4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1L4L

PNPSILICONTRANSISTOR

DESCRIPTION TheBN1L4Lisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1L4M

PNPSILICONTRANSISTOR

DESCRIPTION TheBN1L4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1L4Z

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47k?) ?ComplementarytransistorwithBA1L4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

BN1L4Z

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES ?On-chipbiasresistor (R1=47kΩ) ?ComplementarytransistorwithBA1L4Z

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

FA1L4

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L4Z

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

FA1L4

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L4L

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

FA1L4

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L4M

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

FA1L4L

SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

FA1L4L

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTORMINIMOLD

FEATURES ?ResistorsBuilt-inTYPE ?ComplementarytoFN1L4L

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

晶體管資料

  • 型號(hào):

    AA1L4M

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    DTC144ES,RN1004,UN4213,2SC3399,

  • 最大耗散功率:

    0.25W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-20

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.25

詳細(xì)參數(shù)

  • 型號(hào):

    AA1L4M

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

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專注配單,只做原裝進(jìn)口現(xiàn)貨
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2394
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更多AA1L4M供應(yīng)商 更新時(shí)間2025-1-11 10:30:00