A2C35S12M3-F分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

A2C35S12M3-F屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由意法半導(dǎo)體集團制造生產(chǎn)的A2C35S12M3-F晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。

Features

? ACEPACK? 2 power module

– DBC Cu Al2O3 Cu

? Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter

– 1200 V, 35 A IGBTs and diodes

– Soft and fast recovery diode

? Integrated NTC

Description

This power module is a converter-inverter brake (CIB) topology in an ACEPACK? 2

package with NTC, integrating the advanced trench gate field-stop technology from

STMicroelectronics. This new IGBT technology represents the best compromise

between conduction and switching loss, to maximize the efficiency of any converter

system up to 20 kHz.

Applications

? Inverters

? Motor drives