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A12P10AL

Panels and Panel Accessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

A12P10AL

包裝:散裝 類別:盒子,外殼,機架 盒組件 描述:PANEL J BOX 10.75X8.88

Hoffman Enclosures, Inc.

Hoffman Enclosures, Inc.

A12P10AL

包裝:散裝 類別:盒子,外殼,機架 盒組件 描述:PANEL J BOX 10.75X8.88

Hoffman Enclosures, Inc.

Hoffman Enclosures, Inc.

A12P10C

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

A12P10G

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

A12P10SS

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQB12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB12P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    A12P10AL

  • 制造商:

    Hoffman Enclosures, Inc.

  • 類別:

    盒子,外殼,機架 > 盒組件

  • 包裝:

    散裝

  • 類型:

    面板 - 內(nèi)部

  • 配套使用/相關(guān)產(chǎn)品:

    接線盒

  • 大小 / 尺寸:

    10.750" 長 x 8.880" 寬(273.05mm x 225.55mm)

  • 材料:

  • 描述:

    PANEL J BOX 10.75X8.88

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更多A12P10AL供應(yīng)商 更新時間2024-12-27 16:06:00