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74AUP1G09-Q100中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

74AUP1G09-Q100
廠商型號

74AUP1G09-Q100

功能描述

Low-power 2-input AND gate with open-drain

文件大小

214.98 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Nexperia B.V. All rights reserved
企業(yè)簡稱

NEXPERIA安世

中文名稱

安世半導(dǎo)體(中國)有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2025-2-8 23:00:00

74AUP1G09-Q100規(guī)格書詳情

1. General description

The 74AUP1G09-Q100 is a single 2-input AND gate with open-drain output. Schmitt-trigger action

at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very

low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This

device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables

the output, preventing the potentially damaging backflow current through the device when it is

powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100

(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

? Automotive product qualification in accordance with AEC-Q100 (Grade 1)

? Specified from -40 °C to +85 °C and from -40 °C to +125 °C

? Wide supply voltage range from 0.8 V to 3.6 V

? CMOS low power dissipation

? High noise immunity

? Overvoltage tolerant inputs to 3.6 V

? Low static power consumption; ICC = 0.9 μA (maximum)

? Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial Power-down mode operation

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.65 V to 1.95 V)

? JESD8-5 (2.3 V to 2.7 V)

? JESD8C (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F Class 3A exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? MIL-STD-883, method 3015 Class 3A exceeds 5000 V

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