1. General description

The 74AUP1G00 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes the

circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic

power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified

for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the

damaging backflow current through the device when it is powered down.

2. Features and benefits

? Wide supply voltage range from 0.8 V to 3.6 V

? CMOS low power dissipation

? High noise immunity

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.65 V to 1.95 V)

? JESD8-5 (2.3 V to 2.7 V)

? JESD8C (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F Class 3A exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? CDM JESD22-C101E exceeds 1000 V

? Low static power consumption; ICC = 0.9 μA (maximum)

? Latch-up performance exceeds 100 mA per JESD 78 Class II

? Overvoltage tolerant inputs to 3.6 V

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial Power-down mode operation

? Multiple package options

? Specified from -40 °C to +85 °C and -40 °C to +125 °C

74AUP1G00GN屬于集成電路（IC） > 門和反相器。安世半導體(中國)有限公司制造生產(chǎn)的74AUP1G00GN門和反相器邏輯柵極和逆變器系列中的產(chǎn)品對單個邏輯信號執(zhí)行基本邏輯運算（例如 AND、NOT、OR 等）。與觸發(fā)器不同，它們不能夠存儲信息，不會對提供給其輸入的信號立即做出響應(yīng)。雖然早就被集成電路實施形式所取代，以用于實現(xiàn)復(fù)雜功能，但分立柵極仍可在僅需要非常簡單邏輯功能的情況下使用。