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70V3589S133DRI

包裝：托盤 封裝/外殼：208-BFQFP 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 2MBIT PARALLEL 208PQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BC

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BCG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BF

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BFG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V3589S133BC

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    70V3589S133DRI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    托盤

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 雙端口，同步

  • 存儲(chǔ)容量：

    2Mb（64K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.15V ~ 3.45V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    208-BFQFP

  • 供應(yīng)商器件封裝：

    208-PQFP（28x28）

  • 描述：

    IC SRAM 2MBIT PARALLEL 208PQFP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT, Integrated Device Technol
21+
208-PQFP(28x28)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IDT
20+
QFP-208
12
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Renesas Electronics America In
24+
208-BFQFP
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
IDT, Integrated Device Technol
21+
119-BGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
RENESAS(瑞薩)/IDT
1921+
CABGA-256(17x17)
3575
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
 詢價(jià)
RENESAS(瑞薩)/IDT
2117+
CABGA-256(17x17)
315000
6個(gè)/托盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
RENESAS(瑞薩)/IDT
2021+
CABGA-256(17x17)
499
詢價(jià)
更多70V3589S133DRI供應(yīng)商 更新時(shí)間2024-11-16 10:02:00

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