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40N06

60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=40A RDS(ON),14mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱(chēng)UMW?)

40N06

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The40N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=40A RDS(ON),14mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

40N06

Fast Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

40N06

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

40N06B

38A竊?0V N-CHANNEL MOSFET

KIAKIA Semiconductor Technology

可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司

DTU40N06

N-Channel60-V(D-S)MOSFETTrenchFETPowerMOSFET

DINTEK

DinTek Semiconductor Co,.Ltd

DTU40N06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

DTU40N06

TrenchFETPowerMOSFET

DINTEK

DinTek Semiconductor Co,.Ltd

DTU40N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

HM40N06D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

MS40N06

AdvancedhighcelldensityTrenchtechnology

BWTECH

Bruckewell Technology LTD

MTH40N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTH40N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

MTH40N06FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

MTH40N06FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PJD40N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD40N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJP40N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJU40N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

SPR40N06

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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UMW 友臺(tái)
23+
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32500
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VB
2024
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13500
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量
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HARRIS
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15000
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NULL
23+
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6000
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UMW(友臺(tái)半導(dǎo)體)
2112+
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105000
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VBsemi/臺(tái)灣微碧
21+
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31543
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AOS
23+
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50000
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DTU
23+
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2398799
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VBsemi
22+
TO252
25000
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UMW/友臺(tái)半導(dǎo)體
23+
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22820
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更多40N06供應(yīng)商 更新時(shí)間2024-10-31 17:34:00