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30-06-G

HERMETICALLY SEALED CRYSTAL CAN RELAY

OENINDIA

OEN India Limited

30-06-L

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

DSEC30-06

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ?Internationalstandardpackage ?Planarpassivatedchips ?Veryshortrecoverytime ?Extremelylowswitchinglosses ?LowIRM-values ?Softrecoverybehaviour ?EpoxymeetsUL94V-0 Applications ?Antiparalleldiodeforhighfrequencyswitchingdevices ?

IXYS

IXYS Corporation

DSEC30-06A

HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●

IXYS

IXYS Corporation

DSEC30-06B

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol

IXYS

IXYS Corporation

DSEC30-06B

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ?Internationalstandardpackage ?Planarpassivatedchips ?Veryshortrecoverytime ?Extremelylowswitchinglosses ?LowIRM-values ?Softrecoverybehaviour ?EpoxymeetsUL94V-0 Applications ?Antiparalleldiodeforhighfrequencyswitchingdevices ?

IXYS

IXYS Corporation

DSEI30-06A

FastRecoveryEpitaxialDiode(FRED)

Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio

IXYS

IXYS Corporation

DSEI30-06A

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

DSEP30-06A

UltrafastRectifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

DSEP30-06A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features ?Internationalstandardpackage ?Planarpassivatedchips ?Veryshortrecoverytime ?Extremelylowswitchinglosses ?LowIRM-values ?Softrecoverybehaviour ?EpoxymeetsUL94V-0 ?Version..RisolatedandULregisteredE153432 Applications ?Antiparalleldiodeforhighfr

IXYS

IXYS Corporation

DSEP30-06B

HiPerFREDEpitaxialDiodewithsoftrecovery

Features ?Internationalstandardpackage ?Planarpassivatedchips ?Veryshortrecoverytime ?Extremelylowswitchinglosses ?LowIRM-values ?Softrecoverybehaviour ?EpoxymeetsUL94V-0 ?Version..RisolatedandULregisteredE153432 Applications ?Antiparalleldiodeforhighfr

IXYS

IXYS Corporation

DSEP30-06BR

UltrafastRecoveryDiode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

DSEP30-06BR

HiPerFREDEpitaxialDiodewithsoftrecovery

Features ?Internationalstandardpackage ?Planarpassivatedchips ?Veryshortrecoverytime ?Extremelylowswitchinglosses ?LowIRM-values ?Softrecoverybehaviour ?EpoxymeetsUL94V-0 ?Version..RisolatedandULregisteredE153432 Applications ?Antiparalleldiodeforhighfr

IXYS

IXYS Corporation

DSEP30-06CR

HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(

IXYS

IXYS Corporation

FE30-06

3AFASTEFFICIENTRECTIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

FE30-06

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FE30-06-LFR

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FII30-06D

lowsaturationvoltage

Features ?NPTIGBT -lowsaturationvoltage -positivetemperaturecoefficientforeasyparalleling -fastswitching ?HiPerFREDTMdiode -optimizedfastandsoftreverserecovery -lowoperatingforwardvoltage -lowleakagecurrent ?ISOPLUSi4-PACTMpackage -iso

IXYS

IXYS Corporation

FR30-06

3AFASTRECOVERYPLASTICRECTIFIER

FRONTIER

Frontier Electronics

FR30-06G

3AFASTRECOVERYGLASSPASSIVATEDRECTIFIER

FRONTIER

Frontier Electronics

詳細(xì)參數(shù)

  • 型號:

    30-06-G

  • 制造商:

    OENINDIA

  • 制造商全稱:

    OEN India Limited

  • 功能描述:

    HERMETICALLY SEALED CRYSTAL CAN RELAY

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