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2SK3511-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-S

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=5900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3511

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3511-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3511-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingate

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3511-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3511isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=12.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=5900pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
8866
詢價
NEC
23+
TO-262
12198
全新原裝
 詢價
NEC
22+
TO-262
6000
十年配單,只做原裝
 詢價
NEC
22+
TO-262
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
23+
TO-220
5000
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
RENESAS(瑞薩)/IDT
23+
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
APEC/富鼎
23+
TO-263
69820
終端可以免費供樣,支持BOM配單!
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
R
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多2SK3511-S供應商 更新時間2025-2-19 14:30:00

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