| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SK322 | Silicon N-Channel Junction FET Application HFwidebandamplifier | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | |
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The2SK3221isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowgatecharge QG=9nCTYP.(VDD=450V,VGS=10V,ID=2.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3221isN-channelDMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ?Lowgatecharge QG=9nCT | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=40m?MAX.(VGS=10V,ID=10A) RDS(on)2=60m?MAX.(VGS=4.0V,ID=10A) ?LowCiss:Ciss=790pFTYP. ?Built-i | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS Field Effect Transistor Features LowOn-StateResistance RDS(on)1=40m?MAX.(VGS=10V,ID=10A) RDS(on)2=60m?MAX.(VGS=4.0V,ID=10A) LowCiss:Ciss=790pFTYP. Built-inGateProtectionDiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3224isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=40mΩMAX.(VGS=10V,ID=10A) RDS(on)2=60mΩMAX.(VGS=4.0V,ID=10A) ?LowCi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=40m?MAX.(VGS=10V,ID=10A) RDS(on)2=60m?MAX.(VGS=4.0V,ID=10A) ?LowCiss:Ciss=790pFTYP. ?Built-i | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3224isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=40mΩMAX.(VGS=10V,ID=10A) RDS(on)2=60mΩMAX.(VGS=4.0V,ID=10A) ?LowCi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=18m?MAX.(VGS=10V,ID=17A) RDS(on)2=27m?MAX.(VGS=4.0V,ID=17A) ?LowCiss:Ciss=2100pFTYP. ?Built- | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS Field Effect Transistor Features ●LowOn-StateResistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=17A) ●LowCiss:Ciss=2100pFTYP. ●Built-inGateProtectionDiode | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3225isN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=17A) ?Lowi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=18m?MAX.(VGS=10V,ID=17A) RDS(on)2=27m?MAX.(VGS=4.0V,ID=17A) ?LowCiss:Ciss=2100pFTYP. ?Built- | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3225isN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=17A) ?Lowi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=6m?typ. ?Lowdrivecurrent ?4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel 650 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI |
詳細(xì)參數(shù)
- 型號(hào)：
2SK322
- 制造商：
HITACHI
- 制造商全稱：
Hitachi Semiconductor
- 功能描述：
Silicon N-Channel Junction FET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
23+ |
SOT-23 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
RENESAS/瑞薩 |
24+ |
SOT23 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價(jià) | ||
日立 |
2024 |
SOT-23 |
8230 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量 |
詢價(jià) | ||
reNESAS |
24+ |
60000 |
詢價(jià) | ||||
RENESAS |
13+ |
SOT-23 |
86500 |
特價(jià)熱銷現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
RENESAS |
24+ |
SOT-23 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
23+ |
SOT-23 |
63000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
2023+ |
SMD |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
SOT-23 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TOS |
23+ |
20000 |
正品原裝貨價(jià)格低qq:2987726803 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- 2SK3225(1)-Z-E1
- 2SK3230
- 2SK323KD
- 2SK3272-01S-TE24R
- 2SK3278
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- 2SK3291
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- 2SK3320-BL(TE85L,F
- 2SK3320-GR(TE85L,F
- 2SK3320-Y(TE85L,F)
- 2SK3348
- 2SK337209L
- 2SK33720SL
- 2SK33720UL
- 2SK3373
- 2SK3376-BK
- 2SK3376TK-C
- 2SK3376TT-B
- 2SK3377-Z-E2
- 2SK3383001DE
- 2SK3400001SO
- 2SK3408
- 2SK34260TL
- 2SK3475
- 2SK3476TE12LQ
- 2SK3503-T1
- 2SK3541
- 2SK3546GOL
- 2SK3547
- 2SK354700LSO
- 2SK3547GOL
- 2SK3557-6-TB-E
- 2SK3557-7-TB-E
- 2SK3565(Q,M)
- 2SK3576
- 2SK3582CT-B
- 2SK3653B
- 2SK3664
- 2SK3666-3-TB-E
- 2SK368-GR
- 2SK3719
- 2SK3745LS-1E
- 2SK3747
- 2SK3748-1E
相關(guān)庫(kù)存
更多- 2SK322WR
- 2SK3230B
- 2SK326800L
- 2SK327700L
- 2SK3280
- 2SK3290BNTL
- 2SK3292-TD-E
- 2SK3314(Q)
- 2SK3320-GR
- 2SK3320-Y
- 2SK3342
- 2SK3349DNTR
- 2SK33720HL
- 2SK33720TL
- 2SK3372GUL
- 2SK3376-A
- 2SK3376TK-BK
- 2SK3376TT-A
- 2SK3376TT-BK
- 2SK3378
- 2SK3395
- 2SK3402
- 2SK3416
- 2SK3426GSL
- 2SK3475TE12LF
- 2SK3492
- 2SK3539GOL
- 2SK3541T2L
- 2SK3546JOL
- 2SK354700L
- 2SK3547G0L
- 2SK3557
- 2SK3557-7-TB-E
- 2SK3564(STA4,Q,M)
- 2SK3566(STA4,Q,M)
- 2SK3577
- 2SK3632-Z
- 2SK3663
- 2SK3666-2-TB-E
- 2SK3669
- 2SK3703-1E
- 2SK3738-TL-E
- 2SK3746-1E
- 2SK3747-1E
- 2SK3749
