首頁 >2SJ550S-VB>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
SiliconPChannelMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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