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2SD258

NPN Transistor

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

2SD2580

Color TV Horizontal Deflection Output Applications

ColorTVHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. ·On-chipdamperdiode.

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

2SD2580

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

SAVANTIC

Savantic, Inc.

2SD2580

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SD2581

Color TV Horizontal Deflection Output Applications

Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess.

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

2SD2581

isc Silicon NPN Power Transistor

DESCRIPTION ?HighBreakdownVoltage- :VCBO=1500V(Min) ?HighSwitchingSpeed ?HighReliability APPLICATIONS ?ColorTVhorizontaldeflectionoutputapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SD2582

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS

FEATURES ?LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=0.5A/25mA) ?HighDCCurrentGain hFE=150to600(@VCE=2.0V,lC=0.5A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SD2582

SILICON TRANSISTOR

AUDIOFREQUENCYAMPLIFIER,SWITCHING NPNSILICONEPITAXIALTRANSISTORS FEATURES ·LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=0.5A/25mA) ·HighDCCurrentGain hFE=150to600(@VCE=2.0V,lC=0.5A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD2583

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES ?LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) ?HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SD2583

Plastic-Encapsulated Transistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:5A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SD2583

isc Silicon NPN Power Transistor

DESCRIPTION ?HighCollectorCurrent-IC=5A ?LowSaturationVoltage- :VCE(sat)=0.15V(Max)@IC=1A,IB=50mA ?HighDCCurrentGain- :hFE=150~600@IC=1A APPLICATIONS ?Designedforaudiofrequencyamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SD2583

TO-126 Plastic-Encapsulate Transistors

Features LowVce HighDCCurrentGain

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SD2583

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowsaturationvoltage,highDCcurrentgain. Applications Audiofrequencyamplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SD2583

NPN Silicon Epitaxial Power Transistor

FEATURES ?LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) ?HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A)

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

2SD2583

TRANSISTOR (NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:5A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SD2583

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighDCCurrentGain

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SD2583

SILICON TRANSISTOR

AUDIOFREQUENCYAMPLIFIER,SWITCHING NOPNSILICONEPITAXIALTRANSISTORS FEATURES ·LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) ·HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SD2583-TU

TO-126 Plastic-Encapsulate Transistors

Features LowVce HighDCCurrentGain

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SD2584

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

HIGHPOWERSWITCHINGAPPLICATIONS HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS ?HighDCCurrentGain :hFE=2000(Min.)(VCE=3V,IC=3A) ?LowSaturationVoltage:VCE(sat)=1.5V(Max.)(IC=3A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SD2586

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

2SD2586,D2586 HorizontalDeflectionOutputForColorTV. 1.HighVoltage:Vcbo=1500V 2.LowSaturationVoltage=Vce(sat)=5V(Max.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

晶體管資料

  • 型號(hào)：

    2SD258

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    110V

  • 最大電流允許值：

    4A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    2

  • 可代換的型號(hào)：

    BD241C,BD243C,BD539D,BD581,BD591,BD955,BDY79,3DK205C,

  • 最大耗散功率：

    25W

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    E-8

  • vtest：

    110

  • htest：

    999900

  • atest：

    4

  • wtest：

    25

詳細(xì)參數(shù)

  • 型號(hào)：

    2SD258

  • 制造商：

    ON Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-66
1633
詢價(jià)
23+
TO
20000
正品原裝貨價(jià)格低qq:2987726803
 詢價(jià)
TOSHIBA
11+
400
原裝正品長(zhǎng)期供貨，如假包賠包換 徐小姐13714450367
 詢價(jià)
S.K
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
16+
TO-126
1602
原裝現(xiàn)貨假一罰十
 詢價(jià)
SANYO
23+
TO-3
9980
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來(lái)電查詢
 詢價(jià)
長(zhǎng)電
2020+
TO-126
8400
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
TOSHIBA
19+
TO-3PF
59414
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
更多2SD258供應(yīng)商 更新時(shí)間2024-11-7 16:30:00

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