首頁 >2SC5200-OQ>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SC5200-OQ | power amplifier applications POWERAMPLIFIERAPPLICATIONS ?Complementaryto2SA1943 ????????Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | |
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=17A. ?HighPowerDissipation:150watts. ?HighFrequency:30MHz. ?HighVoltage:VCEO=250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1943/FJL4215. ?ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
HighpowerNPNepitaxialplanarbipolartransistor Description ThisdeviceisaNPNtransistormanufacturedusingnewBiT-LA(bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplif | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SiliconNPNtransistorinaTO-3PPlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
150WattSiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1943 APPLICATIONS ·Highcurrentswitching ·Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-3PPlastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
150WattSiliconEpitaxialPlanarNPNPowerTransistor | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
POWERAMPLIFIERAPPLICATION ?Complementaryto2SA1943 ?Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconNPNPowerTransistors DESCRIPTION ?WithTO-3PLpackage ?Complementtotype2SA1943 APPLICATIONS ?Highcurrentswitching ?Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCurrentCapability ·HighPowerDissipation ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=230V(Min) ·ComplementtoType2SA1943 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
POWERAMPLIFIERAPPLICATIONS POWERAMPLIFIERAPPLICATIONS FEATURES *Recommendedfor100WHighFidelityAudioFrequency AmplifierOutputStage. *ComplementarytoUTC2SA1943 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
PowerAmplifierApplications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC |
詳細(xì)參數(shù)
- 型號:
2SC5200-OQ
- 制造商:
Toshiba America Electronic Components
- 功能描述:
PWR TRANSISTOR TO-3PL PB FREE
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Toshiba |
23+ |
TO-3P |
6680 |
全新原裝優(yōu)勢 |
詢價 | ||
TOSHIBA |
24+ |
原廠封裝 |
8000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST/意法 |
23+ |
SO-16WIDE |
10000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
ST |
23+ |
SO-16WIDE |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
TOS/TO-3B |
23+ |
1000 |
正品原裝貨價格低 |
詢價 | |||
ST |
22+ |
SO-16WIDE |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價 | ||
Fairchild |
24+ |
TO-264 |
450 |
詢價 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
ONSemiconductor |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
FAIRCHILD |
22+23+ |
TO264 |
10461 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 |
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