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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2SC4001	文件：130.78 Kbytes Page：2 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION The2SC4001isdesignedforuseofhigh-resolutionmonitorTVapplications.Thismakesitpossibletoraisethevideobandofhigh-resolutionmonitorTVsto50MHz.	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
2SC4001	文件：189.9 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION ?The2SC4001isdesignedforusesofhigh-resolutionmonitor TVapplications.Thismakesitpossibletoraisethevideoband Ofhigh-resolutionmonitorTVsto50MHz. FEATURES ?Collector–EmitterSustainingVoltage- :VCBO=300V(Min) ?ComplementtoType2SA1546	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4002	文件：73.03 Kbytes Page：3 Pages	High-Voltage Driver Applications??? High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity.	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社	SANYO
2SC4003	文件：78.26 Kbytes Page：3 Pages	High-Voltage Driver Applications? High-VoltageDriverApplications Features ·Highbreakdownvoltage. ·AdoptionofMBITprocess. ·ExcellenthFElinearity.	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社	SANYO
2SC4003	文件：55.22 Kbytes Page：1 Pages	Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited	TEL
2SC4003	文件：46.74 Kbytes Page：2 Pages	NPN Triple Diffused Planar Silicon Transistor Features ●Highbreakdownvoltage ●AdoptionofMBITprocess ●ExcellenthFElinearity	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司	KEXIN
2SC4003	文件：328.07 Kbytes Page：3 Pages	isc Silicon NPN Power Transistor DESCRIPTION ?HighhFE ?Lowcollector-to-emittersaturationvoltage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Highswitchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4003	文件：960.43 Kbytes Page：6 Pages	Silicon NPN transistor in a TO-252 Plastic Package. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity. Applications Highvoltagedriverapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
2SC4003	文件：373.85 Kbytes Page：2 Pages	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat)	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司	JIANGSU
2SC4003	文件：124.74 Kbytes Page：1 Pages	TRANSISTOR (NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:200mA Collector-basevoltage V(BR)CBO:400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司	WINNERJOIN
2SC4003	文件：299.53 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4003	文件：280.4 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4003-251	文件：299.53 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4003-252	文件：280.4 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=60(Min)@IC=50mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4004	文件：59.08 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) SiliconNPNtriplediffusionplanartype Forhighbreakdownvoltagehigh-speedswitching ■Features ●High-speedswitching ●HighcollectortobasevoltageVCBO ●Wideareaofsafeoperation(ASO) ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Full-packpackagewhichcanbe	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SC4004	文件：107.82 Kbytes Page：3 Pages	Silicon NPN Power Transistors DESCRIPTION ?WithTO-220Fapackage ?SatisfactorylinearityoffowardcurrenttransferratiohFE ?Wideareaofsafeoperation(ASO) ?High-speedswitching ?HighcollectortobasevoltageVCBO APPLICATIONS ?Forhighbreakdownvoltagehigh-speedswitching	SAVANTIC Savantic, Inc.	SAVANTIC
2SC4004	文件：132.74 Kbytes Page：3 Pages	Silicon NPN Power Transistors DESCRIPTION ?WithTO-220Fapackage ?SatisfactorylinearityoffowardcurrenttransferratiohFE ?Wideareaofsafeoperation(ASO) ?High-speedswitching ?HighcollectortobasevoltageVCBO APPLICATIONS ?Forhighbreakdownvoltagehigh-speedswitching	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SC4004	文件：162.08 Kbytes Page：3 Pages	Silicon NPN Power Transistors DESCRIPTION ?WithTO-220Fapackage ?SatisfactorylinearityoffowardcurrenttransferratiohFE ?Wideareaofsafeoperation(ASO) ?High-speedswitching ?HighcollectortobasevoltageVCBO APPLICATIONS ?Forhighbreakdownvoltagehigh-speedswitching	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司	JMNIC
2SC4005	文件：87.18 Kbytes Page：3 Pages	Driver Applications? DriverApplications Features ·HighDCcurrentgain. ·LargecurrentcapacityandwideASO. ·On-chipZenerdiodeof50±8Vbetweencollectorandbase. ·Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. ·Largeinductiveloadhandl	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社	SANYO
2SC4006	文件：81.69 Kbytes Page：3 Pages	Driver Applications DriverApplications Features ?HighDCcurrentgain. ?LargecurrentcapacityandwideASO. ?On-chipZenerdiodeof50±8Vbetweencollectorand base. ?Uniformityincollector-to-basebreakdownvoltage duetoaccurateimpuritydiffusionprocess. ?Largeinductiveloadhandlingcap	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社	SANYO

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晶體管資料

型號(hào)：
2SC4001
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
視頻輸出（Vid）_輸出極（E）
封裝形式：
直插封裝
極限工作電壓：
300V
最大電流允許值：
0.1A
最大工作頻率：
300MHZ
引腳數(shù)：
3
可代換的型號(hào)：
BF417,BF459,2SC2258,2SC2611,2SC2621,2SC3503,2SC3620,
最大耗散功率：
1.3W
放大倍數(shù)：
圖片代號(hào)：
B-21
vtest：
300
htest：
300000000
atest：
0.1
wtest：
1.3

詳細(xì)參數(shù)

型號(hào)：
2SC40
制造商：
Distributed By MCM
功能描述：
SUB ONLY TRANSISTOR TO-126 300V .1A 1.3W ECB

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	2SC4001		24+		30000		詢價(jià)
深圳市豪邁興電子有限公司	2SC4001	NEC	2339+		8858	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)
深圳市粵駿騰電子科技有限公司	2SC4001	NEC	24+	TO-126	12500	原裝正品現(xiàn)貨	詢價(jià)
深圳市億智騰科技有限公司	2SC4001	NEC	24+		6540	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)
深圳市河鋒鑫科技有限公司	2SC4001	NEC	22+	TO-126	6000	十年配單,只做原裝	詢價(jià)
深圳市智創(chuàng)誠芯電子科技有限公司	2SC4001	NEC	22+	TO-126	25000	原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十	詢價(jià)
深圳市威雅利發(fā)展有限公司	2SC4001	NEC	01+	TO-126	400	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市億順芯科技有限公司	2SC4001	NEC	2022+	TO126	57550		詢價(jià)
深圳市富芯樂電子科技有限公司	2SC4001	NEC	22+	TO-126	4000	全新原裝品牌專營(yíng)	詢價(jià)
深圳市匯萊威科技有限公司	2SC4001	NEC			589220	16余年資質(zhì) 絕對(duì)原盒原盤更多數(shù)量	詢價(jià)

更多2SC40供應(yīng)商更新時(shí)間2024-12-27 16:30:00

晶體管資料

詳細(xì)參數(shù)

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