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2SA2202

High-Voltage Switching Applications

Features ?AdoptionofFBET,MBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applications ?DC/DCconverters,relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋電機株式會社

2SA2202

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features ?AdoptionofFBET,MBITprocesses ?Largecurrentcapacity ?Lowcollectortoemittersaturationvoltage ?High-speedswitching ?Highallowablepowerdissipation Applicaitons ?DC/DCconverters,relaydrivers,lampdrivers,motordrivers,flash

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA2202-TD-E

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features ?AdoptionofFBET,MBITprocesses ?Largecurrentcapacity ?Lowcollectortoemittersaturationvoltage ?High-speedswitching ?Highallowablepowerdissipation Applicaitons ?DC/DCconverters,relaydrivers,lampdrivers,motordrivers,flash

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA2203

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features ?AdoptionofFBET,MBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers.

SANYOSanyo

三洋三洋電機株式會社

2SA2204

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features ?AdoptionofFBET,MBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers.

SANYOSanyo

三洋三洋電機株式會社

2SA2205

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features ?AdoptionofFBET,MBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Highallowablepowerdissipation. Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers.

SANYOSanyo

三洋三洋電機株式會社

2SA2205

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features ?AdoptionofFBET,MBITprocesses ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage ?High-speedswitching ?Highallowablepowerdissipation Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA2205-E

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features ?AdoptionofFBET,MBITprocesses ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage ?High-speedswitching ?Highallowablepowerdissipation Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA2205-TL-E

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features ?AdoptionofFBET,MBITprocesses ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage ?High-speedswitching ?Highallowablepowerdissipation Applications ?DC/DCconverter,Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SA2206

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA2207

PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

Features ?AdoptionofMBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. Applications ?High-speedswitchingapplications(switchingregulators,drivecircuit).

SANYOSanyo

三洋三洋電機株式會社

2SA2207

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-270mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2207

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-270mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2207-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-270mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2207-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-270mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2209

PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

Features ?AdoptionofMBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. Applications ?High-speedswitchingapplications(switchingregulator,drivercircuit).

SANYOSanyo

三洋三洋電機株式會社

2SA2209

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-330mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2209

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-330mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2209-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-330mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SA2209-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-330mA ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    2SA22

  • 功能描述：

    兩極晶體管 - BJT BIP PNP 2A 100V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
22+
TO-220-3
50000
ON二三極管全系列在售
 詢價
ON
22+
TO-220-3
50000
原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價
ON/安森美
1948+
SOT-89
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ON
20+
SMD
11520
特價全新原裝公司現(xiàn)貨
 詢價
ON/安森美
24+
SMD
4000
原裝現(xiàn)貨
 詢價
ONSEMI
21+
SOT-89
20000
只做正品原裝現(xiàn)貨
 詢價
ON Semiconductor
2010+
N/A
4946
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
SANYO/三洋
22+
SOT-89
20000
保證原裝正品,假一陪十
 詢價
ON/安森美
21+
SMD
30000
百域芯優(yōu)勢 實單必成 可開13點增值稅
 詢價
更多2SA22供應(yīng)商 更新時間2024-10-28 11:00:00

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