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2N7002TB

60VN-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@50mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002T-C

N-ChannelPlastic-EncapsulateMOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002-TP

N-ChannelMOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF· ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?AdvancedTrenchProcessTechnology ?HighInputImpedance ?HighSpeedSwitching ?CMOSLogicCompatibleInput ?Marking:7002/S72 ··

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002TPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION

CHENMKOchenmko

力勤股份有限公司

2N7002TQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

DIODES

Diodes Incorporated

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliabil

DIODES

Diodes Incorporated

2N7002V

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002V

N-ChannelMOSFET

Features ?Lowgatethresholdvoltage ?Lowinputcapacitance ?Lowon-resistance ?Lowinput/outputleakage ?Marking:KAS ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002V

MOSFET(N-Channel)

SOT-563Plastic-EncapsulateMOSFETS FEATURE ?DualN-channelMOSFET ?Lowon-resistance ?Lowgatethresholdvoltage ?Lowinputcapacitance ?Fastswitchingspeed ?Lowinput/outputleakage APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2N7002V

N-ChannelMOSFET

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002V

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.115A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002VA

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VAC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VPT

DualN-ChannelEnhancementMOSFET

VOLTAGE60VoltsCURRENT0.280Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *HighdensitycelldesignforlowRDS(ON) *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Serv

CHENMKOchenmko

力勤股份有限公司

2N7002W

SmallSignalMOSFET

115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2N7002T/R

  • 制造商：

    NXP Semiconductors

  • 功能描述：

    MOSFET Transistor, N-Channel, TO-236AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PANJIT
22+
SOT-323
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
NXP
2339+
N/A
8858
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
PANJIT
16+
TSSOP16
1399
原裝現(xiàn)貨假一罰十
 詢價(jià)
PANJIT
2020+
SOT23
6000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
Philips
2021+
N/A
6800
只有原裝正品
 詢價(jià)
PANJIT
23+
NA
33486
專做原裝正品,假一罰百!
 詢價(jià)
PANJIT
22+23+
SOT-23
31743
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
PJ
1908+
SOT23
55200
PJ專營(yíng)!正規(guī)代理,錯(cuò)過(guò)是損失!
 詢價(jià)
原裝PANJIT
2023+
SOT-23
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
只做原裝
21+
SOT23
36520
一級(jí)代理/放心采購(gòu)
 詢價(jià)
更多2N7002T/R供應(yīng)商 更新時(shí)間2024-10-28 14:52:00

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