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2N7002KW

N-ChannelSMDMOSFETESDProtection

Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

2N7002KW

N-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002KW

N-ChannelMOSFET

N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KW

N-ChSmallSignalMOSFETwithESDProtection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

2N7002KW

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

2N7002KW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002KWA

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002KW-AU

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002KW-CAR

N-ChannelMOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEC
24+
SOT-23
45000
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KEC
2020+PB
SOT-23
11900
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東芝
24+
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30000
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KEC
2016+
SOT23
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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SOT-23
23+
NA
15659
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KEC
19+
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200000
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KEC
1942+
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9852
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KEC
2022+
1000
全新原裝 貨期兩周
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KEC
24+
SOT-23
6430
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原裝KEC
24+
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63200
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更多2N7002K-RTK/P供應(yīng)商 更新時(shí)間2025-5-15 19:42:00

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