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2N6661中文資料微芯科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

2N6661
廠商型號(hào)

2N6661

功能描述

N-Channel, Enhancement-Mode, Vertical DMOS FET

文件大小

313.76 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Microchip Technology
企業(yè)簡(jiǎn)稱

Microchip微芯科技

中文名稱

微芯科技股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-19 20:46:00

2N6661規(guī)格書(shū)詳情

Description

2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low-input capacitance, and fast switching speeds are desired.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral source-drain diode

? High input impedance and high gain

Applications

? Motor controls

? Converters

? Amplifiers

? Switches

? Power supply circuits

? Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

產(chǎn)品屬性

  • 型號(hào):

    2N6661

  • 功能描述:

    MOSFET 90V 4Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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