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2N6039

MIDIUM POWER DAR;OMGTONS

DESCRIPTION The2N6037,2N6038and2N6039aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTo-126plasticpackage. ThecomplementaryPNPtypesarethe2N6034,2N6035and2N6036respectively.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

2N6039

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The2N6037,2N6038and2N6039aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTo-126plasticpackage. ThecomplementaryPNPtypesarethe2N6034,2N6035and2N6036respectively.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

2N6039

Plastic Darlington Complementary Silicon Power Transistors

PlasticDarlingtoncomplementarysiliconpowertransistorsaredesignedforgeneralpurposeamplifierandlow?speedswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125in ?Pb?FreePa

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N6039

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?Complementtotype2N6034/6035/6036 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Designedforgeneral-purposeamplifier andlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

2N6039

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?WithTO-126package ?Complementtotype2N6034/6035/6036 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Designedforgeneral-purposeamplifier andlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N6039

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?Complementtotype2N6034/6035/6036 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Designedforgeneral-purposeamplifier andlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N6039

COMPLEMENTARY SILICON DARLINGTON TRANSISTORS

DESCRIPTION: 2N6034,2N6037seriesdevicesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

2N6039

SILICON POWER DARLINGTON TRANSISTORS

SILICONPOWERDARLINGTONTRANSISTORS DesignedforGeneral-PurposeAmplifier&LowSpeedSwitchingApplications.

CDIL

Continental Device India Limited

2N6039

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6034,2N6037seriesdevicesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導體

2N6039

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

晶體管資料

  • 型號:

    2N6039

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質:

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數:

    3

  • 可代換的型號:

    BD263A,BD679,BD779,

  • 最大耗散功率:

    40W

  • 放大倍數:

    β>750

  • 圖片代號:

    B-21

  • vtest:

    80

  • htest:

    999900

  • atest:

    4

  • wtest:

    40

產品屬性

  • 產品編號:

    2N6039

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導體產品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    剪切帶(CT)帶盒(TB)

  • 晶體管類型:

    NPN - 達林頓

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    3V @ 40mA,4A

  • 電流 - 集電極截止(最大值):

    100μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    750 @ 2A,3V

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應商器件封裝:

    SOT-32-3

  • 描述:

    TRANS NPN DARL 80V 4A SOT32-3

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-126
1259
原廠訂貨渠道,支持BOM配單一站式服務
詢價
MOT
24+
2481
詢價
ST
24+
原廠封裝
4000
原裝現貨假一罰十
詢價
ST/ON
1215+
TO-126
150000
全新原裝,絕對正品,公司大量現貨供應.
詢價
STMicro.
23+
SOT-32
7750
全新原裝優(yōu)勢
詢價
ON
16+
TO-126
10000
全新原裝現貨
詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ISC
22+
TO-126
30910
原裝正品現貨
詢價
ISC
19+
TO-126
20000
詢價
ISC
1942+
TO-126
9852
只做原裝正品現貨或訂貨!假一賠十!
詢價
更多2N6039供應商 更新時間2025-2-4 23:00:00