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2N5301

POWER TRANSISTORS(200W)

NPNSILICONHIGH-POWERTRANSISTORS GeneralPurposeuseinpoweramplifierandswitchingcircuitapplications.

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

2N5301

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES ?HFE----------------------------15-60@15Amps ?VCE(sat)----------------------------2.0V@20Amps ?FastSwitching1μsecRiseTime ?ExcellentSafeOperatingArea

SSDI

Solid States Devices, Inc

2N5301

POWER TRANSISTORS NPN SILICON

High-PowerNPNSiliconTransistors ...foruseinpoweramplifierandswitchingcircuitsapplications. ?HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)@IC=200mAdc(2N5303) ?LowCollector–EmitterSaturationVoltage— VCE(sat)=0.75Vdc(Max)@IC=10Adc

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5301

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Complementtotype2N4398/4399/5745 ?Lowcollector/saturationvoltage ?Excellentsafeoperatingarea APPLICATIONS ?Foruseinpoweramplifierandswitchingcircuitsapplications.

SAVANTIC

Savantic, Inc.

2N5301

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Complementtotype2N4398/4399/5745 ?Lowcollector/saturationvoltage ?Excellentsafeoperatingarea APPLICATIONS ?Foruseinpoweramplifierandswitchingcircuitsapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N5301

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N5301

a very High Input Impedance N-Channel JFET amplifier

The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf

MICROSS

Micross Components

2N5301

HIGH-POWER NPN SILICON TRANSISTORS

20AND30AMPEREPOWERTRANSISTORSNPNSILICON40-60-80Volts200Watts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2N5301_TO-18

a very High Input Impedance N-Channel JFET amplifier

The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf

MICROSS

Micross Components

2N5301_TO-72

a very High Input Impedance N-Channel JFET amplifier

The2N5301isaveryHighInputImpedanceN-ChannelJFETamplifier The2N5301N-channelJFETisdesignedtoprovideperformanceamplificationatlowfrequenciesandwithlownoise. FEATURES DIRECTREPLACEMENTFORLF5301&PF5301 HIGHINPUTIMPENDANCEIG=0.100pA HIGHGAINgf

MICROSS

Micross Components

2N5302

POWER TRANSISTORS NPN SILICON

High-PowerNPNSiliconTransistors ...foruseinpoweramplifierandswitchingcircuitsapplications. ?HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)@IC=200mAdc(2N5303) ?LowCollector–EmitterSaturationVoltage— VCE(sat)=0.75Vdc(Max)@IC=10Adc

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5302

POWER TRANSISTORS(200W)

NPNSILICONHIGH-POWERTRANSISTORS GeneralPurposeuseinpoweramplifierandswitchingcircuitapplications.

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

2N5302

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIOPOWERAMPLIFIERDCTODCCONVERTER ?HighCurrentCapability ?HighPowerDissipation

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

2N5302

High-Power NPN Silicon Transistor

High?PowerNPNSiliconTransistor High?powerNPNsilicontransistorsareforuseinpoweramplifierandswitchingcircuitsapplications. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=0.75Vdc(Max)@IC=10Adc ?Pb?FreePackageisAvailable*

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N5302

NPN HIGH POWER SILICON TRANSISTOR

NPNHIGHPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/456

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N5302

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES ?HFE----------------------------15-60@15Amps ?VCE(sat)----------------------------2.0V@20Amps ?FastSwitching1μsecRiseTime ?ExcellentSafeOperatingArea

SSDI

Solid States Devices, Inc

2N5302

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Complementtotype2N4398/4399/5745 ?Lowcollector/saturationvoltage ?Excellentsafeoperatingarea APPLICATIONS ?Foruseinpoweramplifierandswitchingcircuitsapplications.

SAVANTIC

Savantic, Inc.

2N5302

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Complementtotype2N4398/4399/5745 ?Lowcollector/saturationvoltage ?Excellentsafeoperatingarea APPLICATIONS ?Foruseinpoweramplifierandswitchingcircuitsapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N5302

HIGH-POWER NPN SILICON TRANSISTORS

20AND30AMPEREPOWERTRANSISTORSNPNSILICON40-60-80Volts200Watts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2N5302

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

晶體管資料

  • 型號:

    2N5301

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    40V

  • 最大電流允許值:

    30A

  • 最大工作頻率:

    >2MHZ

  • 引腳數(shù):

    2

  • 可代換的型號:

    BDY29,MJ802,2N3771,2N6270,2SD630,2SD797,3DD170A,

  • 最大耗散功率:

    200W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    40

  • htest:

    2000100

  • atest:

    30

  • wtest:

    200

產(chǎn)品屬性

  • 產(chǎn)品編號:

    2N5301

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    散裝

  • 描述:

    NPN TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
24+
TO-3
10000
全新
詢價
TOS
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
MOTOROLA/摩托羅拉
20+
原裝
67500
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
MOTOROLA
2023+
3
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
MOTOROLA
21+
3
35210
一級代理/放心采購
詢價
MOT
24+
CAN
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
Microsemi
1942+
N/A
908
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詢價
MICROSEMI
1809+
SMD
26
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詢價
Central
22+
NA
65
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更多2N53供應商 更新時間2024-10-27 16:00:00