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2969-SMA

10 MHz minimum 1.5 dB BW

KR

KR Electronics, Inc.

BQ2969

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

TI1Texas Instruments

德州儀器

BQ2969T

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features ?2-series,3-series,and4-seriescellovervoltage protection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Controlinputpin,whichcanimplementcell overtemperatureprotec

TITexas Instruments

德州儀器美國德州儀器公司

BQ2969XY

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

TI1Texas Instruments

德州儀器

BQ2969XYT

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features ?2-series,3-series,and4-seriescellovervoltage protection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Controlinputpin,whichcanimplementcell overtemperatureprotec

TITexas Instruments

德州儀器美國德州儀器公司

FN2969

CMOSProgrammablePeripheralInterface

Description TheIntersil82C55AisahighperformanceCMOSversionoftheindustrystandard8255Aandismanufacturedusingaself-alignedsilicongateCMOSprocess(ScaledSAJIIV).ItisageneralpurposeprogrammableI/Odevicewhichmaybeusedwithmanydifferentmicroprocessors.Thereare2

Intersil

Intersil Corporation

NB2969A

LowPower,ReducedEMIClockSynthesizer

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTE2969

MOSFETN-Channel,EnhancementModeHighSpeedSwitch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent ●LowStaticDrain–SourceOn–StateResistance

NTE

NTE Electronics

RN2969

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ?IncludingtwodevicesinUS6(ultrasuperminitypewith6leads) ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess ?ComplementarytoRN1967~RN1969

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2969CT

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?TwodevicesareincorporatedintoafinepitchSmallMold(6pin) package. ?Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofevermore

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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低通濾波器
50
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新
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NA
546
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