24N40E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
24N40E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
TO-247 |
35210 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
INF |
TO-3P |
608900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
Huber Suhnr |
6 |
公司優(yōu)勢(shì)庫存 熱賣中!! |
詢價(jià) | ||||
INFINEON |
19+ |
TO-247 |
58966 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
SUHNER |
新 |
121 |
全新原裝 貨期兩周 |
詢價(jià) | |||
INF進(jìn)口原 |
17+ |
220-247 |
6200 |
詢價(jià) | |||
MOT |
23+ |
管3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
KIA |
18+ |
TO-3P |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
UTC |
20232024 |
TOLL-8B |
6000 |
老牌代理,長(zhǎng)期現(xiàn)貨 |
詢價(jià) | ||
UTC/友順 |
2022+ |
TO-247 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) |
